hafnium silicide forming

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High Temperature Deformation of Alloys of the

2020 6 19 Particles of silicide and hafnium oxide are located inside the matrix without forming an ordered structure The structure and phase composition of the Nb Si X 50 alloy substantially differ from the alloy made from the powders of the fraction 50– A niobium based solid solution and silicide precipitations form eutectic colonies

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PDF Characterization of HfO2 and Hafnium Silicate Films

Scaling limits of hafnium–silicate films for gate dielectric applications Appl Phys Lett 83 788 2003 10.1063/1. Plasma enhanced chemical vapor deposition and characterization of

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Photoelectron spectroscopy XPS and photoelectron

2006 12 1 Fig 1 shows the experimental diffraction patterns for the hafnium silicide film on silicon 1 0 0 Fig 1 a the pattern of the silicon 2p signal is displayed in Fig 1 b and c the patterns of the Hf 4f signal of a thin and a thick hafnium silicide film are shown respectively A Shirley background was subtracted from the photoemission spectra and the four fold

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US Patent for Tungsten silicide WSIX deposition process

1998 2 12 A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a tungsten silicide nucleation layer on the substrate using a CVD process with a silane source gas followed by deposition of the tungsten silicide film with a dichlorosilane source gas This two step process allows dichlorosilane to be used as a silicon

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Hafnium based High k Gate Dielectrics

2018 9 25 16 Hafnium based High k Gate Dielectrics A P Huang 1 2 Z C Yang 1 and Paul K Chu 2 1Department of Physics Beijing Universi ty of Aeronautics and Astronautics Beijing 100191 2Department of Physics and Materials Scie nce City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong 1Hong Kong China 2China 1 Introduction Scaling of silicon

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Columbium

2021 1 6 ColumbiumHafnium Hot Working Hot forming such as extrusion may be done at 2200 to 1800 F Hot rolling or similar forming may be done at 800 F ColumbiumHafnium Cold Working The alloy has good ductility in the annealed condition and may be cold formed by conventional means ColumbiumHafnium Annealing Anneal at 2000 to 2400 F.

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SWARNAGOWRI ADDEPALLI Ph.D

In this study ∼3 nm thick hafnium silicate films were produced by sputter deposition of hafnium silicide films on precleaned SixGe1−x 100 SixGe1−x 100 with subsequent UV O3 oxidation at room temperature.

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Shell mold for casting niobium silicide alloys and

A method of making a ceramic shell mold for casting niobium silicide based articles comprising the steps of i applying a facecoat forming material to a wax pattern which has a configuration corresponding to a desired mold cavity so as to form a facecoat wherein the facecoat forming material comprises at least one compound selected from

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SWARNAGOWRI ADDEPALLI Ph.D

In this study ∼3 nm thick hafnium silicate films were produced by sputter deposition of hafnium silicide films on precleaned SixGe1−x 100 SixGe1−x 100 with subsequent UV O3 oxidation at room temperature.

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PDF Reactive epitaxy of metallic hafnium silicide

2008 7 8 PDF Hafnium silicide islanding occurs spontaneously when metallic Hf is deposited on a Si 001 surface and subsequently annealed at 750 °C Different

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An XPS study of the initial stages of oxidation of hafnium

The oxidation kinetics of polycrystalline hafnium Hf at room temperature and low oxygen pressure Po2 ∼ 10−7 Torr has been studied by x‐ray photoelectron spectroscopy XPS After a chemisorption

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Photoelectron diffraction study and structure

2007 5 1 The so called zirconium silicide structure was considered as a model structure for computer simulations of the system The alignment of the XPD patterns of bulk silicon and hafnium silicide indicated that the HfSi 2 is arranged along the 0 1 1 axis of the silicon It was further shown that the lattice parameters of the hafnium silicide are

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Resistive switching characteristics of nickel silicide

2015 5 20 for 2min the forming voltage is slightly increased due to the increased crystallinity of HfO 2 17 18 observed from the XRD spectra Fig 1 a and change of silicide s resistiv ity.19 20 There are negligible change in leakage current dur ing forming process indicates the good uniformity and stoichiometry of the dielectric film Fig 2 a .

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Characterizing surrogates to develop an additive

2019 5 1 Spots 4 and 5 display a higher concentration of hafnium suggesting the presence of the Hf 3 Si 2 phase The quantification analysis on Spots 6 7 and 8 suggest the presence of a HfSi phase which later was confirmed by XRD Download Download high res image 599KB Download Download full size image Fig 9 Hafnium silicide sample HS S1.

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PDF Reaction of SiO2 with hafnium oxide in low oxygen

2003 3 31 The formation of silicide is accounted for by a reaction mechanism involving a reaction of ZrO2 with SiO the latter formed above 900 °C at the interface between Si 100 and the thin layer of

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PDF Structure determination of three dimensional

Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon 100 using Mg Kα radiation and synchrotron light By G Kleiman Hafnium silicide formation on Si 100 upon annealing By G Kleiman and A Pancotti.

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Atomic Layer Deposition of Hafnium and Zirconium

2013 4 22 oxide on silicon might produce zirconium silicide ZrSi 2 after 30 s of heating at 1000 °C.5 High refractory oxides such as those of zirconium and hafnium also find uses in optical applications6 7 as catalysts8 9 and because of their hardness and thermal stability as protective coatings.10 11 Future DRAM designs might use capaci

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Forging of Aluminum Alloys

2019 7 10 There is no particular limitation on the method of forming a rotor blade from the Ti–Al alloy in the invention but any conventional method may be used e.g forging or precision casting nearly spherical silicide dispersoids uniformly distributed within an aluminum matrix yttrium zirconium titanium hafnium and niobium The

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Atomic scale effects of zirconium and hafnium

The calculated energy cost of forming Zr Hf Si bonds suggests that SiO/sub 2/ like bonding is energetically favored over silicide like bonding at the Si interface The calculations also suggest that the volume strain associated with Zr or Hf incorporation may lead to increased stress both in the bulk oxide and in the interfacial transition

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inis.iaea

en Ultrathin films of hafnium were deposited on a silicon sample and annealed at 750 C forming rectangular shaped hafnium silicide islands on the surface This silicidation process causes the thermal instability of HfO 2 films on silicon substrates The latter system is under investigation in the field of high k dielectrics to replace the system SiO 2 /Si 100 in MOSFET devices.

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Development of a fused slurry silicide coating for the

1974 9 1 In addition commercial silicide coatings for refractory metals contain large amounts of molybdenum chromium or hafnium Therefore it was considered important to assess the influence of these elements on the oxidation products Similarities between the oxides of zirconium and hafnium suggested that zirconium also should be considered.

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Influence of Titanium Silicide Active Filler on the

Influence of Titanium Silicide Active Filler on the Microstructure Evolution of Borosiloxane Derived Si B O C ceramics V Vijay1 S Bhuvaneswari2 V M Biju3 R Devasia 1 1Ceramic Matrix Products Division Vikram Sarabhai Space Centre Thiruvananthapuram 695022 Kerala India 2Analytical and Spectroscopy Division Vikram Sarabhai Space Centre

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Defects and Disorders in Hafnium Oxide and at Hafnium

2012 3 30 Forming gas annealing for reducing the defect density is but it is still difficult to convert the silicide The defect and disorder states of hafnium oxide and other high k materials p and their impacts are much more complicated than the conventional SiO 2.

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United States Patent Patent US 7 628 878 B2

2020 8 6 hafnium carbide hafnium oxide lithium aluminate molyb denum silicide niobium carbide niobium nitride silicon boride silicon carbide silicon oxide silicon nitride tin oxide tantalum boride tantalum carbide tantalum oxide Methods of forming the ceramic adhesive and of repairing a

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A method of forming a thin film of oxide or hafnium

The invention provides a preparation method of an oxide thin film or nitrided hafnium silicate as well as type of coordination compounds guanidinate asymetrique.Elle also provides a method of making an electronic circuit comprising a step preparation of an oxide thin film or hafnium silicate nitride by the method of the invention.Le method for preparing a thin film of nitrided hafnium

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United States Patent US

2020 8 6 pressure composite forming processes the costs of equip a carbide nitride silicide diboride or tures but in the presence of oxygen they oxidize rapidly at noble metal coating over the metal oxide All of the fibers Hafnium 65 the formation of dense protective coatings of materials such

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Photoelectron diffraction study and structure

2007 5 1 The so called zirconium silicide structure was considered as a model structure for computer simulations of the system The alignment of the XPD patterns of bulk silicon and hafnium silicide indicated that the HfSi 2 is arranged along the 0 1 1 axis of the silicon It was further shown that the lattice parameters of the hafnium silicide are

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Interface bonding structure of hafnium oxide prepared by

In essence the non stoichiometric HfSi x O y structure is composed of silicide hafnium oxide tetrahedral silicon oxide and excess Hf and Si atoms 13 15 The sole peak at around 17.5 eV

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US Patent Application for Method of Forming High

2021 5 18 A semiconductor device and method of fabricating the same are disclosed The method includes depositing a polysilicon gate layer over a gate dielectric formed over a surface of a substrate in a peripheral region forming a dielectric layer over the polysilicon gate layer and depositing a height enhancing HE film over the dielectric layer The HE film the dielectric

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Self aligned contact structure and process for forming

In addition to forming gate electrode 5a the salicide process will form silicide segments 70a–e that extend immediately overlie semiconductor substrate 1 Steps 104 113 are then performed in the same manner as in the embodiment shown in FIGS 2–12 forming a self aligned contact 51 that is electrically coupled to silicide segment 70 b

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Annealing behavior of atomic layer deposited hafnium

Also the formation of hafnium silicide is found to take place at temperatures ≥800 ° C The XPS data shows decomposition of the interfacial hafnium silicate layer into hafnium oxide and

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US Patent Application for HIGH TEMPERATURE

2012 10 29 FIG 2 illustrates an example method for forming a protective layer of a composite article At least a portion of the hafnium silicide and carbon byproduct from the pyrolysis of the non stoichiometric preceramic polymer react to form hafnium carbide as the refractory phase 20.

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Resistive switching characteristics of nickel silicide

2015 5 20 for 2min the forming voltage is slightly increased due to the increased crystallinity of HfO 2 17 18 observed from the XRD spectra Fig 1 a and change of silicide s resistiv ity.19 20 There are negligible change in leakage current dur ing forming process indicates the good uniformity and stoichiometry of the dielectric film Fig 2 a .

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US Patent for Tungsten silicide WSIX deposition process

1998 2 12 A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a tungsten silicide nucleation layer on the substrate using a CVD process with a silane source gas followed by deposition of the tungsten silicide film with a dichlorosilane source gas This two step process allows dichlorosilane to be used as a silicon

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Columbium

2021 1 6 ColumbiumHafnium Hot Working Hot forming such as extrusion may be done at 2200 to 1800 F Hot rolling or similar forming may be done at 800 F ColumbiumHafnium Cold Working The alloy has good ductility in the annealed condition and may be cold formed by conventional means ColumbiumHafnium Annealing Anneal at 2000 to 2400 F.

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Ceramic material suitable for repair of a space vehicle

A precursor of a ceramic adhesive suitable for use in a vacuum thermal and microgravity environment The precursor of the ceramic adhesive includes a silicon based preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide aluminum nitride boron carbide boron oxide boron nitride hafnium boride hafnium carbide hafnium

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Material Safety Data Sheets

2021 9 29 Material Safety Data Sheets The list below provides information on materials chemicals and gasses that may be utilized in the cleanroom Always consult the manufacturer s MSDS prior to utilizing any chemical Please note that some of the chemicals listed here are supplied by research advisers for their own personal research.

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Atomic Layer Deposition of Hafnium Dioxide on Carbon

2021 3 22 prevents the iron catalyst from forming iron silicide with the wafer The wafer was spin coated with hexamethyldisilazane HMDS adhesion promoter and AZ3330 photoresist exposed in a Karl Suss Mask Aligner with a 1 cm diameter dot pattern and developed in AZ300MIF developer for 45 s A 4 nm iron

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Hafnium based High k Gate Dielectrics

2018 9 25 16 Hafnium based High k Gate Dielectrics A P Huang 1 2 Z C Yang 1 and Paul K Chu 2 1Department of Physics Beijing Universi ty of Aeronautics and Astronautics Beijing 100191 2Department of Physics and Materials Scie nce City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong 1Hong Kong China 2China 1 Introduction Scaling of silicon

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Influence of Titanium Silicide Active Filler on the

Influence of Titanium Silicide Active Filler on the Microstructure Evolution of Borosiloxane Derived Si B O C ceramics V Vijay1 S Bhuvaneswari2 V M Biju3 R Devasia 1 1Ceramic Matrix Products Division Vikram Sarabhai Space Centre Thiruvananthapuram 695022 Kerala India 2Analytical and Spectroscopy Division Vikram Sarabhai Space Centre

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Dual Silicide Process

11 The method of claim 1 wherein the silicide in the first active area comprises at least one refractory metal selected from the group consisting of titanium zirconium hafnium vanadium niobium tantalum chromium molybdenum tungsten and combinations comprising at least one of the foregoing metals 12.

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High k Gate Dielectric

2017 12 22 ZrO2 with higher heat of formation than SiO2 may also be slightly reactive with Si forming the silicide ZrSi2 which is not suitable for gate oxide Among these high k dielectrics HfO2 has both a high k value as well as chemical stability with water and Si.

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